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參數(shù)資料
| 型號(hào)： | BF992 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF992<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BF992/A2<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<Always P |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 243K |
| 代理商： | BF992 |
NXP
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
APPLICATIONS
VHF applications such as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143B package with source and
substrate interconnected.
The transistor is protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
PINNING
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Fig.1
Simplified outline (SOT143B) and symbol.
Marking code:
%MB
.
handbook, halfpage
s,b
d
g1
g2
4
3
2
1
Top view
MAM039
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
Y
fs
drain-source voltage (DC)
drain current (DC)
total power dissipation
forward transfer admittance
25
20
40
200
V
mA
mW
mS
T
amb
= 60
°
C
f = 1 kHz; I
D
= 15 mA; V
DS
= 10 V;
V
G2-S
= 4 V
f = 1 MHz; I
D
= 15 mA; V
DS
= 10 V;
V
G2-S
= 4 V
f = 1 MHz; I
D
= 15 mA; V
DS
= 10 V;
V
G2-S
= 4 V
G
S
= 2 mS; I
D
= 15 mA; V
DS
= 10 V;
V
G2-S
= 4 V; f = 200 MHz
C
ig1-s
input capacitance at gate 1
4
pF
C
rs
reverse transfer capacitance
30
fF
F
noise figure
1.2
dB
T
j
operating junction temperature
150
°
C
Rev. 04 - 21 November 2007
2 of 9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF992,215 | 功能描述:射頻MOSFET小信號(hào)晶體管 N-CH DUAL GATE 20V VHF RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF992/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon N-Channel Dual-Gate MOS-FETs |
| BF992T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 40MA I(D) | SOT-143 |
| BF993 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-143 |
| BF994 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FET |
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