參數(shù)資料
型號: BF998R
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: N-channel dual-gate MOSFET
封裝: BF998R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;BF998R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47,
文件頁數(shù): 10/15頁
文件大?。?/td> 279K
代理商: BF998R
1996 Aug 01
10
NXP Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
handbook, halfpage
(dB)
0
10
50
40
30
20
10
MGE808
2
4
6
8
Vagc (V)
IDSS =
max
typ
min
Fig.19 Automatic gain control characteristics
measured in circuit of Fig.17.
V
DD
= 12 V; f = 200 MHz; T
amb
= 25
C.
handbook, halfpage
(dB)
0
10
50
40
30
20
10
MGE807
2
4
6
8
Vagc (V)
IDSS =
max
typ
min
Fig.20 Automatic gain control characteristics
measured in circuit of Fig.18.
V
DD
= 12 V; f = 800 MHz; T
amb
= 25
C.
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BF998R,215 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF998R,235 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 12V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF998R215 制造商:NXP Semiconductors 功能描述:UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
BF998RA 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF998RA-GS08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode