參數(shù)資料
型號(hào): BFG505W
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
中文描述: X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SOT-343N, 4 PIN
文件頁(yè)數(shù): 2/16頁(yè)
文件大?。?/td> 148K
代理商: BFG505W
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT2, CT3, PCN, DECT, etc.), radar detectors, pagers,
satellite television tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
TYPE NUMBER
CODE
BFG505W
BFG505W/X
N0
N1
PINNING
PIN
DESCRIPTION
BFG505W
BFG505W/X
1
2
3
4
collector
base
emitter
emitter
collector
emitter
base
emitter
Fig.1 Simplified outline SOT343N.
handbook, halfpage
Top view
MBK523
2
1
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
0.2
9
19
12
16
1.9
MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
collector-base voltage
collector-emitter voltage R
BE
= 0
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
open emitter
20
15
18
500
250
V
V
mA
mW
T
s
85
°
C
I
C
= 5 mA; V
CE
= 6 V
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz; T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz; T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 6 V; f = 2 GHz; T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz; T
amb
= 25
°
C
Γ
s
= Γ
opt
; I
C
= 1.25 mA; V
CE
= 6 V; f = 2 GHz
pF
GHz
dB
dB
dB
dB
|S
21
|
2
F
insertion power gain
noise figure
15
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