參數(shù)資料
型號: BFG590W
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN 5 GHz wideband transistors
中文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SOT-343N, 4 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 110K
代理商: BFG590W
1998 Oct 15
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590W; BFG590W/X
f = 900 MHz; V
CE
= 4 V.
Fig.6
Gain as a function of collector current;
typical values.
handbook, halfpage
0
20
10
0
100
MLC059
20
40
60
80
gain
(dB)
IC
GUM
Gmax
f = 2 GHz; V
CE
= 4 V.
Fig.7
Gain as a function of collector current;
typical values.
handbook, halfpage
0
8
4
0
100
MLC060
20
40
60
80
gain
(dB)
IC
GUM
Gmax
I
C
= 20 mA; V
CE
= 4 V.
Fig.8
Gain as a function of frequency;
typical values.
handbook, halfpage
(dB)
0
10
MLC061
10
2
10
3
10
4
10
20
30
40
f (MHz)
GUM
Gmax
MSG
Fig.9
Gain as a function of frequency;
typical values.
I
C
= 80 mA; V
CE
= 4 V.
handbook, halfpage
(dB)
0
10
MLC062
10
2
10
3
10
4
10
20
30
40
f (MHz)
GUM
Gmax
MSG
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