- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373018 > BFQ621 (NXP SEMICONDUCTORS) NPN 7 GHz wideband transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | BFQ621 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN 7 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-172A2, 4 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 108K |
| 代理商： | BFQ621 |
1995 Sep 26
2
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
FEATURES
High power gain
High output voltage
High maximum junction temperature
Gold metallization ensures excellent reliability.
APPLICATIONS
It is primarily intended for use in MATV and microwave
amplifiers, such as aerial amplifiers, radar systems,
oscilloscopes, spectrum analyzers, etc.
DESCRIPTION
Silicon NPN transistor in a 4-lead dual-emitter SOT172A2
package with a ceramic cap. All leads are isolated from the
mounting base. Emitter ballasting resistors and application
of gold sandwich metallization ensures an optimum
temperature profile and excellent reliability properties.
PINNING
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
Fig.1 SOT172A2.
handbook, halfpage
MSA457
4
2
3
1
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEO
I
C
P
tot
h
FE
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open base
40
16
150
8
V
mA
W
up to T
mb
= 25
°
C
I
C
= 120 mA; V
CE
= 18 V;
T
amb
= 25
°
C
I
C
= 120 mA; V
CE
= 18 V;
f = 1 GHz; T
amb
= 25
°
C
I
C
= 120 mA; V
CE
= 18 V;
f = 500 MHz; T
amb
= 25
°
C
I
C
= 120 mA; V
CE
= 18 V;
f
(p + q
r)
= 793.25 MHz;
d
im
=
60 dB; R
L
= 75
f
T
transition frequency
7
GHz
G
UM
maximum unilateral power gain
18.5
dB
V
O
output voltage
1.2
V
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFQ64 | TRANSISTOR | BJT | NPN | 200MA I(C) | TO-236 |
| BFQ645 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 40MA I(C) | MICRO-X |
| BFQ65 | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-37 |
| BFQ67T | NPN 8 GHz wideband transistor |
| BFQ68 | NPN 4 GHz wideband transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ63 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:TO-72 |
| BFQ64 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200MA I(C) | TO-236 |
| BFQ645 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 40MA I(C) | MICRO-X |
| BFQ65 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-37 |
| BFQ67 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。