參數資料
型號: BFR96T
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Planar RF Transistor(集電極電流75mA,射頻放大器應用的NPN平面型晶體管)
中文描述: 硅NPN平面射頻晶體管(集電極電流七五毫安,射頻放大器應用的npn型平面型晶體管)
文件頁數: 1/10頁
文件大?。?/td> 141K
代理商: BFR96T
BFR96T
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (10)
Document Number 85036
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
High power gain
Low noise figure
High transition frequency
94 9308
1
3
2
BFR96T Marking: BFR96T
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
13623
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
15
2.5
75
500
175
Unit
V
V
V
mA
mW
C
C
T
amb
60 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
230
Unit
K/W
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