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參數(shù)資料
| 型號(hào)： | BFYP99 |
| 元件分類： | 開關(guān) |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 525K |
| 代理商： | BFYP99 |
A-82
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Fully sealed - matt black
A
Straight PC terminals - four pole L
Straight PC terminals - three pole L
Straight PC terminals - double pole L
I
II
III
12246 X778
ON
-
ON
I
II
III
12256 X778
ON
-ON
I
II
III
12266 X778
ON
-
ON
PANEL CUT
-OUT
STANDARD HARDWARE
Hex nut
U41
(matt black)
Positions and connections, see next page.
L
Models with straight PC terminals are also available with 3,5 mm (.138) short
terminals, functions 6, 9, 7 and 8
. On request.
Flat
(.681)
(.409)
(.594)
(.
6
2
9
)
(.629)
24
(15/32-32UNS)
EPOXY
(.
1
5
7
)
I
II
III
15.10
17.30
10.40
16.00
11.90-32UNS
4
.0
0
1
6
.0
0
6
.0
0
(.
2
3
6
D
IA
)
(.338)
(.
0
3
9
)
(.
2
3
6
)
(.
2
3
6
)
(.157)
(.062 DIA)
1
.0
0
6
.0
0
6
.0
0
1.60
4.00
8.60
(.059)
1.50
(.059)
1.50
22.00
(.866)
(15/32-32UNS)
11.90-32UNS
(.
2
3
6
D
IA
)
6
.0
0
EPOXY
4
.0
0
(.
1
5
7
)
(.
6
2
9
)
1
6
.0
0
(.681)
(.409)
(.594)
24
I
II
III
15.10
17.30
10.40
4.00
6
.0
0
(.157)
(.
2
3
6
)
6
.0
0
1
.0
0
(.
2
3
6
)
(.
0
3
9
)
8.60
(.338)
1.60
(.062 DIA)
(.059)
1.50
22.00
(.866)
(15/32-32UNS)
11.90-32UNS
(.
2
3
6
D
IA
)
6
.0
0
EPOXY
4
.0
0
(.
1
5
7
)
(.
6
2
9
)
1
6
.0
0
(.681)
(.409)
(.594)
24
I
II
III
15.10
17.30
10.40
4.00
6
.0
0
(.157)
(.
2
3
6
)
6
.0
0
1
.0
0
(.
2
3
6
)
(.
0
3
9
)
8.60
(.338)
1.60
(.062 DIA)
5.10
(.200)
12.00
(.472 DIA)
(.551)
(.090)
11.9-32UNS
(15/32-32UNS)
14.00
2.30
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| BG 3123 E6327 | 功能描述:射頻MOSFET小信號(hào)晶體管 Silicon N-Channel MOSFET Tetrode RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BG 3123 H6327 | 功能描述:射頻MOSFET電源晶體管 RF MOSFETS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BG 3123R E6327 | 功能描述:射頻MOSFET小信號(hào)晶體管 Silicon N-Channel MOSFET Tetrode RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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