參數(shù)資料
型號: BLA1011-200
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | SOT-502A
中文描述: 晶體管| MOSFET的| N溝道| 75V的五(巴西)決策支持系統(tǒng)|采用SOT - 502A
文件頁數(shù): 9/12頁
文件大?。?/td> 70K
代理商: BLA1011-200
2001 May 15
9
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-200
DATA SHEET STATUS
Notes
1.
2.
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
相關(guān)PDF資料
PDF描述
BLC6G10-160 UHF power LDMOS transistor
BLC6G10LS-160 UHF power LDMOS transistor
BLC6G10-200 UHF power LDMOS transistor
BLC6G10LS-200 UHF power LDMOS transistor
BLC6G20-110 UHF power LDMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLA1011-200,112 功能描述:射頻MOSFET電源晶體管 BULK TNS-MICP RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLA1011-200.112 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
BLA1011-200H,112 制造商:NXP Semiconductors 功能描述:PHABLA1011-200H.112 AVIONICS LDMOS XSTR
BLA1011-200R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Avionics LDMOS transistors
BLA1011-200R,112 功能描述:射頻MOSFET電源晶體管 TRANS LDMOS NCH 75V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray