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參數(shù)資料
| 型號： | BLF543 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power MOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-171A, 6 PIN |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 96K |
| 代理商： | BLF543 |
October 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
The devices are marked with a
V
GS
indication intended for matched
pair applications.
PINNING - SOT171
PIN
DESCRIPTION
1
2
3
4
5
6
source
source
gate
drain
source
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
fpage
MBA931 - 1
1
3
5
2
4
6
Top view
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
>
12
typ. 8
η
D
(%)
>
50
typ. 50
CW, class-B
CW, class-B
500
960
28
28
10
10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF544 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor |
| BLF544,112 | 功能描述:射頻MOSFET電源晶體管 RF DMOS 20W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF544B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF push-pull power MOS transistor |
| BLF545 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF push-pull power MOS transistor |
| BLF546 | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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