參數(shù)資料
型號: BLF544B
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF push-pull power MOS transistor
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SOT-268A, 4 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 75K
代理商: BLF544B
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF544B
CHARACTERISTICS (per section)
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
450
0.7
2.4
16
12
3.2
MAX. UNIT
0.5
1
4
2.5
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
I
D
= 5 mA; V
GS
= 0
V
GS
= 0; V
DS
= 28 V
±
V
GS
= 20 V; V
DS
= 0
I
D
= 20 mA; V
DS
= 10 V
I
D
= 0.6 A; V
DS
= 10 V
I
D
= 0.6 A; V
GS
= 10 V
V
GS
= 15 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
65
1
300
V
mA
μ
A
V
mS
A
pF
pF
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
V
DS
= 10 V.
handbook, halfpage
T.C.
(mV/K)
0
2
4
2
MDA491
1
ID (A)
10
2
10
1
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
V
DS
= 10 V.
handbook, halfpage
0
2
1
0
5
VGS (V)
ID
(A)
10
20
15
MDA495
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