參數(shù)資料
型號: BLT52
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-409A, 8 PIN
文件頁數(shù): 3/12頁
文件大?。?/td> 93K
代理商: BLT52
1998 Jan 28
3
Philips Semiconductors
Product specification
UHF power transistor
BLT52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
20
10
3
2.5
13
+150
200
V
V
V
A
W
°
C
°
C
T
mb
60
°
C
Fig.2 DC SOAR.
T
mb
= 60
°
C.
handbook, halfpage
MGM485
1
10
1
1
10
10
2
VCE (V)
IC
(A)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
P
tot
= 13 W; T
mb
60
°
C
8
K/W
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