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參數(shù)資料
| 型號： | BLU99_SL |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | UHF power transistor |
| 中文描述： | 超高頻大功率晶體管 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 110K |
| 代理商： | BLU99_SL |
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLU99
BLU99/SL
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
d.c. or average
peak value; f
>
1 MHz
D.C. power dissipation up to T
mb
= 50
°
C
R.F. power dissipation
f
>
1 MHz; T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CBO
V
CEO
V
EBO
max.
max.
max.
36 V
16 V
3 V
I
C
;I
C(AV)
I
CM
P
tot (d.c.)
max.
max.
max.
0,8 A
2,5 A
12,5 W
P
tot (r.f.)
T
stg
T
j
max.
65 to
+
150
°
C
max.
19 W
200
°
C
R
th mb-h
= 0,6 K/W.
Fig.3 D.C. SOAR.
handbook, halfpage
10
1
MDA372
1
VCE (V)
IC
(A)
10
10
2
Th = 70
°
C
Tmb = 50
°
C
Fig.4 Power/temperature derating curves.
I Continuous d.c. operation
II Continuous r.f. operation (f
>
1 MHz).
III Short-time r.f. operation during mismatch (f
>
1 MHz).
handbook, halfpage
0
I
II
III
100
4
12
20
20
Ptot
(W)
40
60
80
MDA373
Th (
°
C)
THERMAL RESISTANCE
(dissipation = 9 W; T
mb
= 25
°
C)
From junction to mounting base
(d.c. dissipation)
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
=
10 K/W
R
th j-mb(rf)
R
th mb-h
=
=
7,5 K/W
0,6 K/W
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