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參數(shù)資料
| 型號(hào)： | BLV2042 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLV2042 |
2000 May 08
10
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
Fig.14 Input impedance as a function of frequency
(series components); typical values.
V
CE
= 26 V; I
CQ
= 15 mA; P
L
= 4 W; T
mb
= 25
°
C.
handbook, halfpage
1800
1850
1900
2000
6
f (MHz)
Zi
(
)
2
0
4
1950
MGD953
xi
ri
Fig.15 Load impedance as a function of frequency
(series components); typical values.
V
CE
= 26 V; I
CQ
= 15 mA; P
L
= 4 W; T
mb
= 25
°
C.
handbook, halfpage
1800
8
4
f (MHz)
ZL
(
)
0
1850
1900
2000
1950
MGD954
XL
RL
MOUNTING RECOMMENDATIONS
Heat from the device is transferred via the leads and the
metallized underside. For optimum heat transfer it is
recommended that the transistor be mounted on a
grounded metallized area on the component side of the
printed-circuitboard.Thismetallizedareashouldcontaina
large number of metallized, solder-filled through-holes.
The non-component side of the printed-circuit board forms
a ground plane. When the printed-circuit board is mounted
on the heatsink using heatsink compound, a thermal
resistance from mounting base to heatsink of 0.9 K/W can
be attained.
Fig.16 Power gain as a function of frequency;
typical values.
V
CE
= 26 V; I
CQ
= 15 mA; P
L
= 4 W; T
mb
= 25
°
C.
handbook, halfpage
Gp
(dB)
1800
1850
1900
2000
12
4
0
8
1950
MGD955
f (MHz)
Fig.17 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
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