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參數(shù)資料
| 型號： | BLV2044 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-437A, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 101K |
| 代理商： | BLV2044 |
1996 Nov 14
4
Philips Semiconductors
Product specification
UHF power transistor
BLV2044
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Capacitance of die only.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
100
16
MAX.
4
120
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
open emitter; I
C
= 20 mA
open base; I
C
= 10 mA
open collector; I
E
= 0.5 mA
V
CE
= 12.5 V; V
BE
= 0
V
CE
= 26 V; I
C
= 1 A
V
CB
= 26 V; I
E
= i
e
= 0; f = 1 MHz;
note 1
V
CE
= 26 V; I
C
= 0; f = 1 MHz
60
28
2.5
45
V
V
V
mA
pF
C
re
feedback capacitance
8
pF
Fig.4
DC current gain as a function of collector
current; typical values.
(1) V
CE
= 26 V; t
p
= 500
μ
s;
δ
= < 1 %.
(2) V
CE
= 10 V.
handbook, halfpage
0
80
40
0
1
5
2
3
4
MGG285
IC (A)
hFE
(1)
(2)
Fig.5
Feedback capacitance as a function of
collector-emitter voltage; typical values.
handbook, halfpage
0
10
20
40
30
MGG286
0
10
20
VCE (V)
Cre
(pF)
f = 1 MHz.
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| BLV2040 | TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 300MA I(C) | SOT-409B |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV2045 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLV2045N | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV2046 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV2047 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV21 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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