參數(shù)資料
型號: BLV20
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁數(shù): 4/11頁
文件大?。?/td> 81K
代理商: BLV20
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV20
CHARACTERISTICS
T
j
= 25
°
C
Note
1.
Measured under pulse conditions: t
p
200
μ
s;
δ ≤
0,02.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 2 mA
Collector-emitter breakdown voltage
open base; I
C
= 10 mA
Emitter-base breakdown voltage
open collector; I
E
= 1 mA
Collector cut-off current
V
BE
= 0; V
CE
= 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
D.C. current gain
(1)
I
C
= 0,4 A; V
CE
= 5 V
V
(BR)CES
>
65 V
V
(BR)CEO
>
36 V
V
(BR)EBO
>
4 V
I
CES
<
1 mA
E
SBO
E
SBR
>
>
typ.
0,5 mJ
0,5 mJ
50
h
FE
10 to 100
Collector-emitter saturation voltage
(1)
I
C
= 1,25 A; I
B
= 0,25 A
Transition frequency at f = 100 MHz
(1)
I
E
= 0,4 A; V
CB
= 28 V
I
E
= 1,25 A; V
CB
= 28 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 28 V
Feedback capacitance at f = 1 MHz
I
C
= 50 mA; V
CE
= 28 V
Collector-flange capacitance
V
CEsat
typ.
0,8 V
f
T
f
T
typ.
typ.
600 MHz
520 MHz
C
c
typ.
10 pF
C
re
C
cf
typ.
typ.
7,1 pF
2 pF
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