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| 型號(hào)： | BLV910 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor(UHF 功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171, 6 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | BLV910 |
1995 Apr 11
3
Philips Semiconductors
Product specification
UHF power transistor
BLV910
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
70
30
3
1.5
1.5
30
+150
200
V
V
V
A
A
W
°
C
°
C
up to T
mb
= 25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
P
tot
= 30 W; T
mb
= 25
°
C
5.85
K/W
R
th mb-h
0.4
K/W
Fig.2 DC SOAR.
(1) T
mb
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
10
1
1
10
10
IC
(A)
VCE(V)
(1)
MLC658
2
1
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
Pot
(W)
0
10
20
30
0
20
40
60
80
100
120
h
140
o
(2)
MLC659
(1)
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