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參數(shù)資料
| 型號： | BLV946 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-273A, 6 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 107K |
| 代理商： | BLV946 |
1997 Oct 30
3
Philips Semiconductors
Product specification
UHF power transistor
BLV946
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature range
operating junction temperature
open emitter
open base
open collector
65
70
30
3
6
6
90
+150
+200
V
V
V
A
A
W
°
C
°
C
up to T
mb
= 25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
P
tot
= 90 W; T
mb
= 25
°
C
1.94
K/W
R
th mb-h
0.3
K/W
Fig.2 DC SOAR.
(1) T
mb
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
1
1
10
10
IC
(A)
VCE(V)
(1)
MLD231
2
(2)
Fig.3 Power derating curve.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
40
40
0
80
MLD232
80
120
160
h
Ptot
(W)
o
(2)
(1)
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