參數(shù)資料
型號: BLW33
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF Linear power transistor(UHF 線性功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-122A, 4 PIN
文件頁數(shù): 9/12頁
文件大?。?/td> 81K
代理商: BLW33
August 1986
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW33
Fig.10 Bias circuit for class-A amplifier at
f
vision
= 860 MHz.
+
Vs
+
VCC
+
VBB
0
R9
R8
R7
TR1
C3
R5
R4
C2
C1
R3
R2
D1
R1
D2
C4
R6
MGP437
List of components:
C1 = 100 pF ceramic capacitor
C2 = C3 = 100 nF polyester capacitor
C4 = 10
μ
F/25 V solid aluminium electrolytic capacitor
R1 = 150
carbon resistor (0,25 W)
R2 = 100
preset potentiometer (0,1 W)
R3 = 82
carbon resistor (0,25 W)
R4 = R5 = 2,2 k
carbon resistor (0,25 W)
R6 = 6
;
parallel connection of 2
×
12
carbon resistors (0,5 W each)
R7 = R8 = 820
carbon resistor (0,25 W)
R9 = 33
carbon resistor (0,25 W)
D1 = BZY88-C3V3
D2 = BY206
TR1 = BD136
Information for wideband application from 470 to 860 MHz available on request.
1.
Three-tone test method (vision carrier
8 dB, sound carrier
7 dB, sideband signal
16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal
75 dB.
Two-tone test method (vision carrier 0 dB, sound carrier
7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (d
cm
) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to
20 dB.
2.
Fig.11 Intermodulation distortion (d
im
)
(1.)
and cross-modulation distortion (d
cm
)
(2.)
as a function of output power.
Typical values; V
CE
= 25 V; I
C
= 300 mA; f
vision
= 860 MHz;
T
h
= 25
°
C;
T
h
= 70
°
C.
handbook, full pagewidth
4
65
0
1
3
MGP450
2
60
55
30
0
10
20
dim
(dB)
dcm
(%)
dim
dcm
Po sync (W)
相關PDF資料
PDF描述
BLW34 UHF Linear power transistor(UHF 線性功率晶體管)
BLW50F HF/VHF power transistor(HF/VHF功率 晶體管)
BLW60 VHF power transistor
BLW60C VHF power transistor
BLW76 HF/VHF power transistor
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