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參數(shù)資料
| 型號： | BLW85 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLW85 |
March 1993
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
CHARACTERISTICS
T
j
= 25
°
C
Note
1.
Measured under pulse conditions: t
p
≤
200
μ
s;
δ ≤
0,02.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 50 mA
Collector-emitter breakdown voltage
open base; I
C
= 100 mA
Emitter-base breakdown voltage
open collector; I
E
= 25 mA
Collector cut-off current
V
BE
= 0; V
CE
= 18 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
D.C. current gain
(1)
I
C
= 4 A; V
CE
= 5 V
D.C. current gain ratio of matched devices
(1)
I
C
= 4 A; V
CE
= 5 V
Collector-emitter saturation voltage
(1)
I
C
= 12,5 A; I
B
= 2,5 A
Transition frequency at f = 100 MHz
(1)
I
E
=
4 A; V
CB
= 12,5 V
I
E
= 12,5 A; V
CB
= 12,5 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 15 V
Feedback capacitance at f = 1 MHz
I
C
= 200 mA; V
CE
= 15 V
Collector-flange capacitance
V
(BR) CES
>
36 V
V
(BR) CEO
>
16 V
V
(BR)EBO
>
4 V
I
CES
<
25 mA
E
SBO
E
SBR
>
>
typ.
8 mJ
8 mJ
50
h
FE
10 to 80
h
FE1
/h
FE2
<
1,2
V
CEsat
typ.
1,5 V
f
T
f
T
typ.
typ.
650 MHz
600 MHz
C
c
typ.
120 pF
C
re
C
cf
typ.
typ.
82 pF
2 pF
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相關代理商/技術(shù)參數(shù) |
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|---|---|
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| BLW898 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF linear power transistor |
| BLW90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
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