參數(shù)資料
型號: BLW87
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁數(shù): 8/11頁
文件大小: 81K
代理商: BLW87
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLW87
Fig.9
handbook, halfpage
0
5
10
15
0
25
MGP654
PL
(W)
PS (W)
typical values
f = 175 MHz
VCE = 13.5 V
VCE = 12.5 V
Th = 25
°
C
Th = 70
°
C
Fig.10
handbook, halfpage
0
10
5
0
150
100
50
0
Gp
(dB)
40
MGP655
20
η
(%)
PL (W)
typical values
f = 175 MHz
Th = 25
°
C
VCE = 13.5 V
VCE = 12.5 V
Gp
η
Fig.11 R.F. SOAR (short-time operation during
mismatch); f = 175 MHz; T
h
= 70
°
C;
R
th mb-h
= 0,3 K/W; V
CEnom
= 13,5 V or 12,5 V;
P
S
= P
Snom
at V
CEnom
and VSWR =1;
measured in the circuit of Fig.7.
handbook, halfpage
PLnom
(W)
(VSWR = 1)
1
1.1
1.2
1.3
20
0
10
MGP656
VCE
VCEnom
50
VSWR = 20
PS
PSnom
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
S
/P
Snom
) increases linearly with supply over-voltage
ratio.
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