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參數(shù)資料
| 型號： | BPW85 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTOTRANSISTOR NPN 3MM CLEAR |
| 中文描述： | Photodetector Transistors NPN Phototransistor 70V 100mW 850nm |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 106K |
| 代理商： | BPW85 |
BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 23-Aug-11
2
Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
020
40
60
80
0
25
50
75
100
125
P
V
-
Po
w
er
Dissipation
(mW)
T
amb - Ambient Temperature (°C)
100
94 8308
R
thJA = 450 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector emitter breakdown voltage
IC = 1 mA
V(BR)CEO
70
V
Collector emitter dark current
VCE = 20 V, E = 0
ICEO
1200
nA
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, E = 0
CCEO
3pF
Angle of half sensitivity
± 25
deg
Wavelength of peak sensitivity
λp
850
nm
Range of spectral bandwidth
λ0.1
450 to 1080
nm
Collector emitter saturation voltage
Ee = 1 mW/cm2,
λ = 950 nm,
IC = 0.1 mA
VCEsat
0.3
V
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100
Ω
ton
2.0
μs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100
Ω
toff
2.3
μs
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100
Ω
fc
180
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector light current
Ee = 1 mW/cm2,
λ = 950 nm,
VCE = 5 V
BPW85A
Ica
0.8
2.5
mA
BPW85B
Ica
1.5
4.0
mA
BPW85C
Ica
3.0
8.0
mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BPW85A | 功能描述:光電晶體管 NPN Phototransistor 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW85A | 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW85B | 功能描述:光電晶體管 NPN Phototransistor 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW85B | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW85C | 功能描述:光電晶體管 NPN Phototransistor 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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