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參數(shù)資料
| 型號(hào)： | BPW85C |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Phototransistor Chip Silicon 850nm 2-Pin T-1 Bulk |
| 中文描述： | Photodetector Transistors NPN Phototransistor 70V 100mW 850nm |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 106K |
| 代理商： | BPW85C |
BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 23-Aug-11
3
Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
Fig. 2 - Relative Collector Current vs. Ambient Temperature
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Collector Light Current vs. Collector Emitter Voltage
20
100
40
60
80
10
101
102
103
104
VCE = 20 V
Tamb - Ambient Temperature (°C)
I CEO
-
Collector
Dark
C
u
rrent
(nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20
40
60
80
100
1.6
1.8
λ
94 8239
Tamb - Ambient Temperature (°C)
I ca
rel
-
Relati
v
e
Collector
C
u
rrent
V
CE = 5 V
E
e = 1 mW/cm
2
= 950 nm
0.01
0.1
1
0.01
0.1
1
10
I ca
-
Collector
Light
C
u
rrent
(mA)
E
e - Irradiance (mW/cm
2)
10
94 8271
BPW85C
BPW85B
V
CE = 5 V
λ = 950 nm
BPW85A
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.1
1
10
0.01
0.1
1
10
100
94 8275
BPW 85 A
λ = 950 nm
Ee = 1 mW/cm2
V
CE - Collector Emitter Voltage (V)
I ca
-
Collector
Light
C
u
rrent
(mA)
0.1
1
10
0.01
0.1
1
10
100
94 8276
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
λ = 950 nm
BPW 85 B
Ee = 1 mW/cm2
V
CE - Collector Emitter Voltage (V)
I ca
-
Collector
Light
C
u
rrent
(mA)
0.1
1
10
0.01
0.1
1
10
V
CE - Collector Emitter Voltage (V)
100
94 8277
E e = 1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
BPW 85 C
λ = 950 nm
I ca
-
Collector
Light
C
u
rrent
(mA)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPW85C | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1 |
| BPW96 | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW96A | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW96A | 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P |
| BPW96B | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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