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參數(shù)資料
| 型號： | BS108 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor(N通道增強(qiáng)型垂直DMOS 晶體管) |
| 中文描述： | 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 56K |
| 代理商： | BS108 |
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BS108
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1.
Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10
×
10 mm
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
peak drain current
total power dissipation
storage temperature range
junction temperature
200
20
250
1
1
150
150
V
V
mA
A
W
°
C
°
C
open drain
up to T
amb
= 25
°
C (note 1)
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient (note 1)
125 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
5
400
50
MAX. UNIT
1
100
1.8
8
80
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Y
fs
C
iss
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
transfer admittance
input capacitance
I
D
= 10
μ
A; V
GS
= 0
V
DS
= 160 V; V
GS
= 0
±
V
GS
= 20 V; V
DS
= 0
I
D
= 1 mA; V
GS
= V
DS
I
D
= 100 mA; V
GS
= 2.8 V
I
D
= 300 mA; V
DS
= 25 V
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
200
0.4
200
V
μ
A
nA
V
mS
pF
C
oss
output capacitance
20
30
pF
C
rss
feedback capacitance
5
10
pF
Switching times (see Figs
2
and
2
)
t
on
turn-on time
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
5
10
ns
t
off
turn-off time
20
30
ns
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| BS108 AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108 SB36890\E7 | 功能描述:MOSFET N-Channel 240V 0.23A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108,126 | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108/01 AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS108/01,126 | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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