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參數(shù)資料
| 型號： | BS616LV2019TIG70 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 元件分類： | DRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的128K的× 16位 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 255K |
| 代理商： | BS616LV2019TIG70 |
Revision 2.1
Jan.
2004
8
BS616LV1611
BSI
R0201-BS616LV1611
ORDERING INFORMATION
PACKAGE DIMENSIONS
E0
.1
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
N
E
D
NOTES:
48
12.0
9.0
E1
D1
e
3.75
5.25
0.75
SIDE VIEW
D0.1
D1
1.4
Max.
e
E1
0.2
5
±
0.0
5
SOLDER BALL 0.35±0.05
VIEW A
3.375
2.
625
48 mini-BGA (9mm x 12mm)
±
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
BS616LV1611 X X
Z
Y Y
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
PACKAGE
F :BGA-48-0912
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| BS616LV2019TIP70 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2020 | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS616LV2019TIP55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 128K X 16 bit |
| BS616LV2019TIP70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2020 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2020AC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2020AI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
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