參數(shù)資料
型號(hào)： BS616UV4016DI-85
廠商： BRILLIANCE SEMICONDUCTOR, INC.
英文描述： Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit
中文描述： 超低功耗/高速CMOS SRAM的256 × 16位
文件頁(yè)數(shù)： 8/8頁(yè)
文件大小： 255K
代理商： BS616UV4016DI-85
Revision 2.1
Jan.
2004
8
BS616LV1611
BSI
R0201-BS616LV1611
ORDERING INFORMATION
PACKAGE DIMENSIONS
E0
.1
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
N
E
D
NOTES:
48
12.0
9.0
E1
D1
e
3.75
5.25
0.75
SIDE VIEW
D0.1
D1
1.4
Max.
e
E1
0.2
5
±
0.0
5
SOLDER BALL 0.35±0.05
VIEW A
3.375
2.
625
48 mini-BGA (9mm x 12mm)
±
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
BS616LV1611 X X
Z
Y Y
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
PACKAGE
F :BGA-48-0912
相關(guān)PDF資料
PDF描述
BS616UV4016DIG85 Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit
BS616UV4016DIP10 Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit
BS616UV4016DIP85 Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit
BS616UV4016EC Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit
BS616UV4016ECG10 Replaced by SN74LVC08A : Quadruple 2-Input Positive-AND Gate 14-SOIC -40 to 85
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