- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295167 > BS616UV4020BC (BRILLIANCE SEMICONDUCTOR, INC.) Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable PDF資料下載
參數(shù)資料
| 型號(hào)： | BS616UV4020BC |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
| 中文描述： | 超低功率/電壓CMOS SRAM的256K × 16或512K × 8位開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | BS616UV4020BC |
Revision 2.1
Jan.
2004
4
R0201-BS616LV1611
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
UNIT
t
AVAX
t
RC
Read Cycle Time
70
--
55
--
ns
t
AVQV
t
AA
Address Access Time
--
70
--
55
ns
t
ELQV
t
ACS1
Chip Select Access Time
(CE1)
--
70
--
55
ns
t
ELQV
t
ACS2
Chip Select Access Time
(CE2)
--
70
--
55
ns
t
BA
t
BA
Data Byte Control Access Time
(LB,UB)
--
35
--
30
ns
t
GLQV
t
OE
Output Enable to Output Valid
--
35
--
30
ns
t
ELQX
t
CLZ
Chip Select to Output Low Z
(CE2,CE1)
10
--
10
--
ns
t
BE
t
BE
Data Byte Control to Output Low Z (LB,UB)
5
--
5
--
ns
t
GLQX
t
OLZ
Output Enable to Output in Low Z
5
--
5
--
ns
t
EHQZ
t
CHZ
Chip Deselect to Output in High Z (CE2,CE1)
--
35
--
30
ns
t
BDO
t
BDO
Data Byte Control to Output High Z (LB,UB)
--
35
--
30
ns
t
GHQZ
t
OHZ
Output Disable to Output in High Z
--
30
--
25
ns
t
AXOX
t
OH
Data Hold from Address Change
10
--
10
--
ns
AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
READ CYCLE
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
DON T CARE:
ANY CHANGE
PERMITTED
DOES NOT
APPLY
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
CHANGE :
STATE
UNKNOWN
CENTER
LINE IS HIGH
IMPEDANCE
”O(jiān)FF ”STATE
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
BSI
BS616LV1611
(1)
1. tBA is 35ns/30ns (@speed=70ns/55ns) with address toggle .
tBA is 70ns/55ns (@speed=70ns/55ns) without address toggle .
NOTE :
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output
Timing Reference Level
0.5Vcc
Output Load
CL = 30pF+1TTL
CL = 100pF+1TTL
CYCLE TIME : 70ns
MIN. TYP. MAX.
Vcc = 2.7~5.5V
Vcc = 3.0~5.5V
CYCLE TIME : 55ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS616UV2019AC | Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616UV2019ACP10 | Hex Buffer/Driver With Open-Drain Outputs 14-TVSOP -40 to 85 |
| BS616UV2019ACP85 | Hex Buffer/Driver With Open-Drain Outputs 14-TVSOP -40 to 85 |
| BS616UV2019AI | Hex Buffer/Driver With Open-Drain Outputs 14-TVSOP -40 to 85 |
| BS616UV2019DC | Hex Buffer/Driver With Open-Drain Outputs 14-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS61KIT | 功能描述:電池座、電池扣和電池接頭 1 - 9V KIT RoHS:否 制造商:Eagle Plastic Devices 產(chǎn)品:Battery Snaps 電池組電池大小:9 V 電池?cái)?shù)量:1 端接類型:Snaps 顏色:Black 材料:Polyvinyl Chloride (PVC) 安裝風(fēng)格:Snap-In |
| BS62LV1023 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62LV1023DC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62LV1023DI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62LV1023JC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。