10H/100H TTL DC ELECTRICAL CHARACTERISTICS" />
參數(shù)資料
型號: BSO110N03MS G
廠商: Infineon Technologies
文件頁數(shù): 4/5頁
文件大?。?/td> 0K
描述: MOSFET N-CH 30V 10A DSO-8
產(chǎn)品目錄繪圖: Mosfets DSO-8
標(biāo)準(zhǔn)包裝: 1
系列: OptiMOS™
FET 型: MOSFET N 通道,金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 10A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 11 毫歐 @ 12.1A,10V
Id 時的 Vgs(th)(最大): 2V @ 250µA
閘電荷(Qg) @ Vgs: 20nC @ 10V
輸入電容 (Ciss) @ Vds: 1500pF @ 15V
功率 - 最大: 1.56W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: PG-DSO-8
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: BSO110N03MS GINDKR
4
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
10H/100H TTL DC ELECTRICAL CHARACTERISTICS(1)
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
VOH
Output HIGH Voltage
2.5
2.5
2.5
VIOH = –15mA
2.0
2.0
2.0
IOH = –24mA
VOL
Output LOW Voltage
0.55
0.55
0.55
V
IOL = 48mA
VCCT = VCCE = 5.0V
±5%
Note:
1. DC levels such as VOH, VOL, etc., are standard for PECL and FAST devices, with the exceptions of: IOL =48mA at 0.5 VOL; and IOH = 24mA at 2.0 VOH.
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Condition
tPD
Propagation Delay
ns
CL = 50 pF
to Output
CLK to Q
——
6.0
——
6.0
——
6.0
MR to Q
——
6.0
——
6.0
——
6.0
tskpp
Part-to-Part Skew(1,4)
——
0.5
——
0.5
——
0.5
ns
CL = 50pF
tskew++
Within-Device Skew(2,4)
——
0.3
——
0.3
——
0.3
ns
CL = 50pF
tskew– –
Within-Device Skew(3,4)
——
0.3
——
0.3
——
0.3
ns
CL = 50pF
tS
Set-up Time
0.200
——
0.200
——
0.200
——
ns
tH
Hold Time
0.500
——
0.500
——
0.500
——
ns
tPW
Minimum Pulse Width
ns
CLK, MR
1.0
——
1.0
——
1.0
——
VPP
Minimum Input Swing
200
150
200
150
200
150
mV
tr
Rise/Fall Time
——
1.5
——
1.5
——
1.5
ns
CL = 50pF
tf
1.0V to 2.0V
fMAX
Max. Input Frequency(5,6)
160
——
160
——
160
——
MHz
AC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
Notes:
1. Device-to-Device Skew considering HIGH-to-HIGH transitions at common VCC level.
2. Within-Device Skew considering HIGH-to-HIGH transitions at common VCC level.
3. Within-Device Skew considering LOW-to-LOW transitions at common VCC level.
4. All skew parameters are guaranteed but not tested.
5. Frequency at which output levels will meet a 0.8V to 2.0V minimum swing.
6. The fMAX value is specified as the minimum guaranteed maximum frequency. Actual operational maximum frequency may be greater.
相關(guān)PDF資料
PDF描述
CD4FD271GO3F CAP MICA 270PF 500V 2% RADIAL
CD4FD251GO3F CAP MICA 250PF 500V 2% RADIAL
940C12W1P5K CAP FILM 1.5UF 1.2KVDC AXIAL
SFP37S7.5K238B-F CAP FILM 7.5UF 370VAC QC TERM
930C1W6P8K-F CAP FILM 6.8UF 100VDC AXIAL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSO110N03MSGXUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 10A 8-Pin DSO T/R 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Cut TR (SOS) 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 10A DSO-8
BSO119N03S 功能描述:MOSFET N-CH 30V 9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSO119N03SFUMA1 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 9A DSO-8
BSO119N03ST 制造商:Infineon Technologies AG 功能描述:N-CH MOSFET,30V,SO8, 11.9MOHM,
BSO119N03SXT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 9A 8-Pin DSO