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參數(shù)資料
| 型號： | BSO612CV |
| 廠商： | Infineon Technologies |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 0K |
| 描述： | MOSFET COMPL N+P 60V 2A 8-SOIC |
| 產(chǎn)品變化通告： | Product Discontinuation 22/Feb/2008 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | SIPMOS® |
| FET 型： | N 和 P 溝道 |
| FET 特點： | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss)： | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C： | 3A，2A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C： | 120 毫歐 @ 3A，10V |
| Id 時的 Vgs(th)（最大）： | 4V @ 20µA |
| 閘電荷(Qg) @ Vgs： | 15.5nC @ 10V |
| 輸入電容 (Ciss) @ Vds： | 340pF @ 25V |
| 功率 - 最大： | 2W |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | P-DSO-8 |
| 包裝： | 剪切帶 (CT) |
| 其它名稱： | BSO612CVINCT |
4
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
10H/100H TTL DC ELECTRICAL CHARACTERISTICS(1)
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
VOH
Output HIGH Voltage
2.5
—
2.5
—
2.5
—
VIOH = –15mA
2.0
—
2.0
—
2.0
—
IOH = –24mA
VOL
Output LOW Voltage
—
0.55
—
0.55
—
0.55
V
IOL = 48mA
VCCT = VCCE = 5.0V
±5%
Note:
1. DC levels such as VOH, VOL, etc., are standard for PECL and FAST devices, with the exceptions of: IOL =48mA at 0.5 VOL; and IOH = 24mA at 2.0 VOH.
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Condition
tPD
Propagation Delay
ns
CL = 50 pF
to Output
CLK to Q
——
6.0
——
6.0
——
6.0
MR to Q
——
6.0
——
6.0
——
6.0
tskpp
Part-to-Part Skew(1,4)
——
0.5
——
0.5
——
0.5
ns
CL = 50pF
tskew++
Within-Device Skew(2,4)
——
0.3
——
0.3
——
0.3
ns
CL = 50pF
tskew– –
Within-Device Skew(3,4)
——
0.3
——
0.3
——
0.3
ns
CL = 50pF
tS
Set-up Time
0.200
——
0.200
——
0.200
——
ns
tH
Hold Time
0.500
——
0.500
——
0.500
——
ns
tPW
Minimum Pulse Width
ns
CLK, MR
1.0
——
1.0
——
1.0
——
VPP
Minimum Input Swing
200
150
—
200
150
—
200
150
—
mV
tr
Rise/Fall Time
——
1.5
——
1.5
——
1.5
ns
CL = 50pF
tf
1.0V to 2.0V
fMAX
Max. Input Frequency(5,6)
160
——
160
——
160
——
MHz
AC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
Notes:
1. Device-to-Device Skew considering HIGH-to-HIGH transitions at common VCC level.
2. Within-Device Skew considering HIGH-to-HIGH transitions at common VCC level.
3. Within-Device Skew considering LOW-to-LOW transitions at common VCC level.
4. All skew parameters are guaranteed but not tested.
5. Frequency at which output levels will meet a 0.8V to 2.0V minimum swing.
6. The fMAX value is specified as the minimum guaranteed maximum frequency. Actual operational maximum frequency may be greater.
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參數(shù)描述 |
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| BSO612CV G | 功能描述:MOSFET Dual N/P Channel 60 V 3 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSO612CVG | 制造商:Infineon Technologies AG 功能描述:MOSFET N/P-CH 60V 2A 8-SOIC |
| BSO612CVGHUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N/P-CH 60V 2A 8-SOIC |
| BSO612CVNT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin SO |
| BSO612CVT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO T/R |
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