參數(shù)資料
型號: BSP121
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode vertical D-MOS transistor
中文描述: 0.35 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 2/12頁
文件大?。?/td> 75K
代理商: BSP121
1998 Apr 01
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP121
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope and
designed for use as a line current
interrupter in telephone sets and for
application in relay, high-speed and
line-transformer drivers.
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown
QUICK REFERENCE DATA
PINNING - SOT223
Marking code
BSP121
Drain source voltage
Gate-source voltage (open drain)
Drain current (DC)
Total power dissipation up to
T
amb
= 25
°
C
Drain-source on-resistance
I
D
= 400 mA; V
GS
= 10 V
V
DS
±
V
GSO
I
D
max.
max.
max.
200 V
20 V
350 mA
P
tot
max.
1.5 W
typ.
max.
4.5
6.0
R
DS(on)
Transfer admittance
I
D
= 400 mA; V
DS
= 25 V
min.
typ.
200
350
mS
mS
Y
fs
1
2
3
4
= gate
= drain
= source
= drain
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM054
4
1
2
3
Top view
s
d
g
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