參數(shù)資料
型號(hào)： BSP205
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： RP10 (E) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 10 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 86%
中文描述： 0.275 A, 60 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： SOT-223, 4 PIN
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 65K
代理商： BSP205
April 1995
3
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP205
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1.
Device mounted on an epoxy printed-circuit board 40 mm
×
40 mm
×
1.5 mm; mounting pad for the drain lead
min. 6 cm
2
.
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to T
amb
= 25
°
C (note 1)
Storage temperature range
Junction temperature
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
65 to 150
°
C
max.
60 V
20 V
275 mA
550 mA
1.5 W
150
°
C
From junction to ambient (note 1)
R
th j-a
=
83.3 K/W
相關(guān)PDF資料
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BSP206 P-channel enhancement mode vertical D-MOS transistor
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