參數(shù)資料
型號(hào): BSP32
廠商: 意法半導(dǎo)體
英文描述: MEDIUM POWER AMPLIFIER
中文描述: 中功率功率放大器
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 73K
代理商: BSP32
BSP30/31
BSP32/33
MEDIUM POWER AMPLIFIER
ADVANCE DATA
I
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
I
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
I
GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
I
NPN COMPLEMENTS ARE BSP40, BSP41,
BSP42 AND BSP43 RESPECTIVELY
INTERNAL SCHEMATIC DIAGRAM
October 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BSP30/BSP31
-70
-60
-70
BSP32/BSP33
-90
-80
-90
V
CBO
V
CEO
V
CES
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector-Emitter Voltage (R
BE
= 1K
)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
V
V
V
V
A
A
W
o
C
o
C
-5
-1
-0.1
2
-65 to 150
150
1
2
2
3
SOT-223
1/4
相關(guān)PDF資料
PDF描述
BSP32 Surface mount Si-Epitaxial PlanarTransistors
BSP40 MEDIUM POWER AMPLIFIER
BSP41 MEDIUM POWER AMPLIFIER
BSP43 MEDIUM POWER AMPLIFIER
BSP43 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSP-32 制造商:Cherry Aerospace 功能描述:
BSP32 T/R 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BSP32,115 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BSP32/T1 制造商:NXP Semiconductors 功能描述:
BSP320 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal-Transistor