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參數(shù)資料
| 型號(hào)： | BSP41 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | MEDIUM POWER AMPLIFIER |
| 中文描述： | 中功率功率放大器 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | BSP41 |
THERMAL DATA
R
thj-amb
R
thj-tab
Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 60 V
V
CB
= 60 V T
j
= 150
o
C
I
C
= 100
μ
A
for
BSP40/BSP41
for
BSP42/BSP43
100
50
nA
μ
A
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
70
90
V
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CES
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
I
C
= 10 mA
for
BSP40/BSP41
for
BSP42/BSP43
I
C
= 10
μ
A
for
BSP40/BSP41
for
BSP42/BSP43
60
80
V
V
70
90
V
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
I
C
= 10
μ
A
5
V
V
CE(sat)
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
0.25
0.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
for
BSP40/BSP41
I
C
= 100
μ
A V
CE
= 5 V
I
C
= 100 mA V
CE
= 5 V
I
C
= 500 mA V
CE
= 5 V
for
BSP42/BSP43
I
C
= 100
μ
A V
CE
= 5 V
I
C
= 100 mA V
CE
= 5 V
I
C
= 500 mA V
CE
= 5 V
1
1.2
V
V
h
FE
DC Current Gain
10
40
30
30
100
50
120
300
f
T
Transition Frequency
I
C
= 50 mA V
CE
= 10 V f = 35 MHz
100
MHz
C
CBO
Collector-Base
Capacitance
Emitter-Base
Capacitance
Turn-on Time
I
E
= 0 V
CB
= 10 V f = 1 MHz
20
pF
C
EBO
I
C
= 0 V
EB
= 0.5 V f = 1 MHz
90
pF
t
on
I
C
= 100 mA I
B1
= -I
B2
= 5 mA
250
ns
t
off
Turn-on Time
1000
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
1.5 %
BSP40/41/42/43
2/4
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PDF描述 |
|---|---|
| BSP43 | MEDIUM POWER AMPLIFIER |
| BSP43 | NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
| BSP40 | Surface mount Si-Epitaxial PlanarTransistors |
| BSP41 | Surface mount Si-Epitaxial PlanarTransistors |
| BSP43 | Surface mount Si-Epitaxial PlanarTransistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSP41 T/R | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSP41,115 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSP41115 | 制造商:NXP Semiconductors 功能描述:TRANS NPN 60V 1A SOT-223 |
| BSP41T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | SOT-223 |
| BSP41TA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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