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參數(shù)資料
| 型號(hào)： | BSS44 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SILICON PNP TRANSISTOR |
| 中文描述： | 硅PNP晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | BSS44 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
=0)
Collector-base
Breakdown Voltage
(I
E
= 0)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
Emitter-base Voltage
(I
C
= 0)
V
CE
= -60 V
-0.5
μ
A
V
(BR)CBO
I
C
= -1 mA
-65
V
V
CEO(sus)
I
C
= -50 mA
-60
V
V
EBO
I
E
=.- 1 mA
-6
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -0.5 A I
B
= -50 mA
I
C
= - 5 A I
B
= -0.5 A
-0.1
-0.4
-1
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -0.5 A I
B
= -50 mA
I
C
= - 5 A I
B
= -0.5 A
I
C
= -0.5 A V
CE
= -2 V
I
C
= -2 A V
CE
= -2 V
I
C
= -5 A V
CE
= -2 V
-0.8
-1.1
-1.6
V
V
h
FE
DC Current Gain
30
40
70
45
f
T
Transition Frequency
I
C
= -0.5 A V
CE
= -5 V
80
MHz
C
CBO
Collector-base
Capacitance
Turn-on Time
I
E
= 0 V
CB
= 10 V
f = 1 MHz
IC = -0.5 A V
CC
= -20 V
I
B1
= -I
B2
= -50 mA
100
pF
t
on
0.065
μ
s
μ
s
t
off
Turn-off Time
0.45
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BSS44
2/4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSS44_00 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON PNP TRANSISTOR |
| BSS46 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| BSS50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN Darlington transistors |
| BSS50A | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTORS |
| BSS51 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN Darlington transistors |
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