參數(shù)資料
型號: BSS89
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: N-channel enhancement mode vertical D-MOS transistors
中文描述: 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 59K
代理商: BSS89
1998 Apr 24
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1.
Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead
minimum 10
×
10 mm.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
55
200
±
20
300
1.2
1
+150
150
V
V
mA
A
W
°
C
°
C
open drain
T
amb
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
0.1
4.5
350
45
15
3.5
MAX.
2.8
200
60
±
100
6
UNIT
V
(BR)DSS
V
GSth
I
DSS
drain-source breakdown voltage V
GS
= 0; I
D
= 250
μ
A
gate-source threshold voltage
drain-source leakage current
200
0.8
140
V
V
nA
μ
A
nA
mS
pF
pF
pF
V
DS
= V
GS
; I
D
= 1 mA
V
DS
= 60 V; V
GS
= 0
V
DS
= 200 V; V
GS
= 0
V
DS
= 0; V
GS
=
±
20 V
I
GSS
R
DSon
y
fs
C
iss
C
oss
C
rss
gate leakage current
drain-source on-state resistance V
GS
= 10 V; I
D
= 400 mA
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
I
D
= 400 mA; V
DS
= 25 V
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
Switching times
(see Figs 2 and 3)
t
on
turn-on time
V
GS
= 0 to 10 V; V
DD
= 50 V;
I
D
= 250 mA
V
GS
= 10 to 0 V; V
DD
= 50 V;
I
D
= 250 mA
5
ns
t
off
turn-off time
15
ns
相關(guān)PDF資料
PDF描述
BSS91 Capacitor Kit;Contents Of Kit:36 different values, 20 pcs. per value
BST100 P-channel enhancement mode vertical D-MOS transistors(P溝道增強(qiáng)型垂直D-MOS晶體管)
BST120 P-channel enhancement mode vertical D-MOS transistor
BST122 P-channel enhancement mode vertical D-MOS transistor
BST15 PNP high-voltage transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSS89AMO 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 290MA I(D) | TO-92VAR
BSS89E6288 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal Transistor
BSS89E6296 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal Transistor
BSS89E6325 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal Transistor
BSS89T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 290MA I(D) | TO-92VAR