參數(shù)資料
型號(hào)： BST62_70
文件頁數(shù)： 1/1頁
文件大小： 13K
代理商： BST62_70
SOT89 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – J ANUARY 1996
FEATURES
*
Fast Switching
*
High h
FE
%
PARTMAKING DETAIL —
627
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SY MBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
-85
V
Collector-Emitter Voltage
-72
V
Emitter-Base Voltage
-10
V
Pea Pulse Current
-1.5
A
Continuous Collector Current
-500
mA
Base Current
-100
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX .
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-85
V
I
C
=-10
μ
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-72
V
I
C
=-10mA, I
B
=0*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-10
V
I
E
=-10
μ
A, I
C
=0
Emitter Cut-Off Current
I
EBO
-10
μ
A
V
EB
=-8V, I
E
=0
Collector-Emitter
Cut-Off Current
I
CES
-10
μ
A
V
CE
=-72V, I
C
=0
Collector-Emitter
S aturation Voltage
V
CE(sat)
-1.3
-1.3
V
V
I
C
=-500mA, I
B
=-0.5mA
I
C
=-500mA, I
B
=-0.5mA
T
j
=150°C
Base-Emitter
S aturation Voltage
V
BE(sat)
-1.9
V
I
C
=-500mA, I
B
=-0.5mA
S tatic Forward Current
Transfer Ratio
h
FE
1K
2K
I
C
=-150mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
Turn On Time
t
on
400 Typical
ns
I
C
=-500mA
I
Bon
=I
Boff
=-0.5mA
Turn Off Time
t
off
1.5K Typical
ns
* Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
For typical characteristics graphs see FZTA63 (SOT223) datasheet.
SOT89
BST62-70
C
C
B
E
3 - 82
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參數(shù)描述
BST62-70TA 功能描述:達(dá)林頓晶體管 PNP Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BST-7 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:BST-7
BST70 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel vertical D-MOS transistor
BST70A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel vertical D-MOS transistor
BST72A 功能描述:MOSFET BULK MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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