參數(shù)資料
型號(hào)： BSW68A
廠商： CENTRAL SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： Small Signal Transistors
中文描述： 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
封裝： TO-39, 3 PIN
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 53K
代理商： BSW68A
1997 May 05
4
Philips Semiconductors
Product specification
NPN switching transistors
BSW66A; BSW67A; BSW68A
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
BSW66A
I
E
= 0; V
CB
= 50 V
I
E
= 0; V
CB
= 50 V; T
j
= 150
°
C
I
E
= 0; V
CB
= 100 V
100
50
100
nA
μ
A
μ
A
I
CBO
collector cut-off current
BSW67A
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°
C
I
E
= 0; V
CB
= 120 V
100
50
100
nA
μ
A
μ
A
I
CBO
collector cut-off current
BSW68A
I
E
= 0; V
CB
= 75 V
I
E
= 0; V
CB
= 75 V; T
j
= 150
°
C
I
E
= 0; V
CB
= 150 V
I
C
= 0; V
EB
= 3 V
I
C
= 0; V
EB
= 6 V
V
CE
= 5 V
I
C
= 10 mA
I
C
= 100 mA
I
C
= 500 mA
I
C
= 1 A
100
50
100
100
100
nA
μ
A
μ
A
nA
μ
A
I
EBO
emitter cut-off current
h
FE
DC current gain
30
40
30
10
130
150
400
1
900
1.1
1.4
20
300
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 10 mA
mV
mV
V
mV
V
V
pF
pF
MHz
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 150 mA
I
C
= 100 mA; I
B
= 10 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 150 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0; f = 1 MHz
I
C
= 100 mA; V
CE
= 20 V; f = 100 MHz
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
collector capacitance
emitter capacitance
transition frequency
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time
turn-off time
I
Con
= 500 mA; I
Bon
= 50 mA;
I
Boff
=
50 mA
500
900
ns
ns
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