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參數(shù)資料
| 型號： | BT134-600G |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 4Q Triac |
| 中文描述： | 4Q雙向可控硅 |
| 封裝： | BT134-600G<SOT82 (SOT82)|<<http://www.nxp.com/packages/SOT82.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 92K |
| 代理商： | BT134-600G |
NXP Semiconductors
Product specification
Triacs
BT134 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
SYMBOL
PARAMETER
MAX.
MAX. UNIT
envelope,
intended
for
use
in
applications
requiring
high
BT134-
500
600
800
bidirectional transient and blocking
BT134-
500F
600F
800F
voltage capability and high thermal
BT134-
500G
600G
800G
cycling
performance.
Typical
V
DRM
Repetitive peak off-state
500
600
800
V
applications include motor control,
voltages
industrial
and
domestic
lighting,
I
T(RMS)
RMS on-state current
4
A
heating and static switching.
I
TSM
Non-repetitive peak on-state
25
A
current
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
mb
≤ 107 C
-
4
A
I
TSM
Non-repetitive peak
full sine wave; T
j = 25 C prior to
on-state current
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I
2tI2t for fusing
t = 10 ms
-
3.1
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 6 A; IG = 0.2 A;
on-state current after
dI
G/dt = 0.2 A/
μs
triggering
T2+ G+
-
50
A/
μs
T2+ G-
-
50
A/
μs
T2- G-
-
50
A/
μs
T2- G+
-
10
A/
μs
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
1
23
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
μs.
August 1997
1
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT134-600G,127 | 功能描述:雙向可控硅 RAIL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| bt134-600g127 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BT134-700 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|4A I(T)RMS|SOT-82 |
| BT134-700E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|4A I(T)RMS|SOT-82 |
| BT134-700G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|700V V(DRM)|4A I(T)RMS|SOT-82 |
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