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參數(shù)資料
| 型號(hào)： | BT134W-600D |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 4Q Triac |
| 中文描述： | 4Q雙向可控硅 |
| 封裝： | BT134W-600D<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 35, 2003,; |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | BT134W-600D |
Semiconductors
Product specification
Triacs
logic level
BT134W series D
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivated,sensitivegatetriacs
in a plastic envelope suitable for
surface mounting, intended for use in
general
purpose
switching
and
applications.
These
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
SYMBOL
PARAMETER
MAX.
MAX. UNIT
BT134W-
500D
500
1
10
600D
600
1
10
bidirectional
phase
devices
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
V
A
A
control
are
logic
integrated
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
500
1
-600
600
1
V
DRM
Repetitive peak off-state
voltages
-
V
I
T(RMS)
I
TSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T
sp
≤
108 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
1
A
-
-
-
10
11
0.5
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
4
1
2
3
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
μ
s.
August 1997
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT134W-600E | 4Q Triac |
| BT134W-600 | 4Q Triac |
| BT134W-800 | 4Q Triac |
| BT136-600D | 4Q Triac |
| BT136-600E | 4Q Triac |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT134W-600D,115 | 功能描述:雙向可控硅 600V 1A RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT134W-600D | 制造商:NXP Semiconductors 功能描述:TRIAC 1A 600V SOT-223 |
| BT134W-600D/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC 1A SOT-223 |
| BT134W-600D115 | 制造商:NXP Semiconductors 功能描述:TRIAC 600V 1A SOT-223 |
| BT134W600DT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|1A I(T)RMS|TO-261AA |
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