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參數(shù)資料
| 型號： | BT134W-600E |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 4Q Triac |
| 中文描述： | 4Q雙向可控硅 |
| 封裝： | BT134W-600E<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 35, 2003,; |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 107K |
| 代理商： | BT134W-600E |
Semiconductors
Product specification
Triacs
sensitive gate
BT134W series E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivated,sensitivegatetriacs
in a plastic envelope suitable for
surface mounting, intended for use in
general
purpose
switching
and
applications, where high sensitivity is
required in all four quadrants.
SYMBOL
PARAMETER
MAX.
MAX. UNIT
BT134W-
500E
500
1
10
600E
600
1
10
bidirectional
phase
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
V
A
A
control
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
500
1
-600
600
1
V
DRM
Repetitive peak off-state
voltages
-
V
I
T(RMS)
I
TSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T
sp
≤
108 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
1
A
-
-
-
10
11
0.5
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
4
1
2
3
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
μ
s.
August 1997
1
Rev 1.200
相關PDF資料 |
PDF描述 |
|---|---|
| BT134W-600 | 4Q Triac |
| BT134W-800 | 4Q Triac |
| BT136-600D | 4Q Triac |
| BT136-600E | 4Q Triac |
| BT136-600 | 4Q Triac |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BT134W-600E T/R | 功能描述:雙向可控硅 TAPE-7 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BT134W-600E,115 | 功能描述:雙向可控硅 TAPE-7 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BT134W600ET/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|1A I(T)RMS|TO-261AA |
| BT134W-600F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT134W-600G | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
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