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參數(shù)資料
| 型號(hào)： | BT136B-800E |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 4Q Triac |
| 中文描述： | 4Q雙向可控硅 |
| 封裝： | BT136B-800E<SOT404 (SOT404)|<<http://www.nxp.com/packages/SOT404.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 142K |
| 代理商： | BT136B-800E |
BT136B-800E
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 31 March 2011
3 of 14
NXP Semiconductors
BT136B-800E
4Q Triac
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DRM
I
T(RMS)
Parameter
repetitive peak off-state voltage
RMS on-state current
Conditions
Min
-
-
Max
800
4
Unit
V
A
full sine wave; T
mb
≤
107 °C;
see
Figure 1
; see
Figure 2
; see
Figure 3
I
TSM
non-repetitive peak on-state current full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4
; see
Figure 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I
2
t for fusing
t
p
= 10 ms; sine-wave pulse
rate of rise of on-state current
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/μs;
T2+ G+
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/μs;
T2+ G-
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/μs;
T2- G-
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/μs;
T2- G+
peak gate current
-
25
A
-
27
A
I
2
t
dI
T
/dt
-
-
3.1
50
A
2
s
A/μs
-
50
A/μs
-
50
A/μs
-
10
A/μs
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
-
2
A
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
-
-
-
-40
-
5
5
0.5
150
125
V
W
W
°C
°C
over any 20 ms period
f = 50 Hz
T
mb
≤
107 °C
RMS on-state current as a function of surge
duration; maximum values
Fig 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig 2.
T
mb
(
°
C)
50
150
100
0
50
003aae828
2
3
1
4
5
I
T(RMS)
(A)
0
003aae830
4
8
12
I
T(RMS)
(A)
0
10
2
surge duration
(s)
10
1
10
1
2
6
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT136S-600E | 4Q Triac |
| BT136S-600F | 4Q Triac |
| BT136S-600 | 4Q Triac |
| BT136S-800E | 4Q Triac |
| BT136S-800F | 4Q Triac |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT136B-800E /T3 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT136B-800E,118 | 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT136B800ET/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|800V V(DRM)|4A I(T)RMS|SOT-404 |
| BT136B-800F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT136B-800G | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
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