參數(shù)資料
型號(hào): BT138B-500E
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Triacs sensitive gate
中文描述: 500 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263
封裝: PLASTIC, SOT-404, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 52K
代理商: BT138B-500E
Philips Semiconductors
Product specification
Triacs
BT138B series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
envelope
suitable
mounting,
intended
applications
requiring
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
applications include motor control,
industrial
and
domestic
heating and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
for
surface
use
high
in
BT138B-
BT138B-
BT138B-
500
500F
500G
500
600
600F
600G
600
800
800F
800G
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
Typical
I
T(RMS)
I
TSM
12
95
12
95
12
95
A
A
lighting,
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
99 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
12
A
-
-
-
95
105
45
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
1
3
mb
2
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
October 1997
1
Rev 1.200
相關(guān)PDF資料
PDF描述
BT138B-500F DIODE ZENER SINGLE 500mW 12Vz 0.05mA-Izt 0.05 0.05uA-Ir 9.1 SOD-123 3K/REEL
BT138B-500G DIODE ZENER SINGLE 200mW 12Vz 0.05mA-Izt 0.05 0.05uA-Ir 9.1 SOD-323 3K/REEL
BT138B-800 DIODE ZENER SINGLE 500mW 14Vz 0.05mA-Izt 0.05 0.05uA-Ir 10.6 SOD-123 3K/REEL
BT138B-800F DIODE ZENER SINGLE 150mW 14Vz 0.05mA-Izt 0.05 0.05uA-Ir 10.6 SOD-523 3K/REEL
BT138B-800G DIODE ZENER SINGLE 500mW 15Vz 0.05mA-Izt 0.05 0.05uA-Ir 11.4 SOD-123 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BT138B-500F 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs
BT138B-500G 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs
BT138B-600 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs
BT138B-600 /T3 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
BT138B-600,118 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB