參數(shù)資料
型號: BT138F-500F
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: DIODE ZENER TRIPLE ISOLATED 200mW 16Vz 0.05mA-Izt 0.05 0.05uA-Ir 12.1 SOT-363 3K/REEL
中文描述: 500 V, 12 A, TRIAC
封裝: PLASTIC, FULL PACK-3
文件頁數(shù): 5/7頁
文件大?。?/td> 51K
代理商: BT138F-500F
Philips Semiconductors
Product specification
Triacs
BT138F series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT138
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
BT138
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.175 V
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT138
tp / s
Zth j-hs (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
bidirectional
unidirectional
with heatsink compound
without heatsink compound
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
5.4
9.1
Tj / C
7
dV/dt (V/us)
4.2
dIcom/dt =
15 A/ms
12
off-state dV/dt limit
BT138...G SERIES
BT138 SERIES
BT138...F SERIES
February 1996
5
Rev 1.100
相關(guān)PDF資料
PDF描述
BT138F-500G DIODE ZENER TRIPLE ISOLATED 200mW 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOT-363 3K/REEL
BT138F-600 DIODE ZENER TRIPLE ISOLATED 200mW 22Vz 0.05mA-Izt 0.05 0.05uA-Ir 16.7 SOT-363 3K/REEL
BT138F-600F DIODE ZENER TRIPLE BI-DIRECTIONAL 200mW 24Vz 0.05mA-Izt 0.05 0.05uA-Ir 18.2 SOT-363 3K/REEL
BT138F-600G DIODE ZENER TRIPLE ISOLATED 200mW 27Vz 0.05mA-Izt 0.05 0.05uA-Ir 20.4 SOT-363 3K/REEL
BT138F-800 DIODE ZENER TRIPLE ISOLATED 200mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOT-363 3K/REEL
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