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參數(shù)資料
| 型號(hào)： | BT139B_SERIES_E |
| 英文描述： | Triacs sensitive gate |
| 中文描述： | 雙向敏感門(mén) |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | BT139B_SERIES_E |
Philips Semiconductors
Product specification
Triacs
BT139 series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50
0
100
150
0
0.5
1
1.5
2
2.5
3
T50
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
VT / V
2
2.5
3
0
10
20
30
40
50
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.195 V
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp
P
D
t
unidirectional
bidirectional
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
9.3
dV/dt (V/us)
5.6
dIcom/dt =
20 A/ms
16
off-state dV/dt limit
BT139 SERIES
BT139...F SERIES
12
7.2
BT139...G SERIES
April 2003
4
Rev 1.500
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| BT139B800E | TRIAC|800V V(DRM)|16A I(T)RMS|SOT-404 |
| BT139_SERIES_E | Triacs sensitive gate |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BT139BSERIESH | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Triacs high noise immunity |
| BT139F | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Triacs |
| BT139F-500 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Triacs |
| BT139F-500F | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Triacs |
| BT139F-500G | 制造商:TECCOR 制造商全稱(chēng):TECCOR 功能描述:Thyristor Product Catalog |
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