- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369514 > BT151X (NXP Semiconductors N.V.) Thyristors PDF資料下載
參數(shù)資料
| 型號： | BT151X |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Thyristors |
| 中文描述： | 晶閘管 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BT151X |
9397 750 13162
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 9 June 2004
6 of 11
Philips Semiconductors
BT151X series
Thyristors
7.
Characteristics
Table 6:
T
j
= 25
°
C unless otherwise stated
Symbol
Parameter
Static characteristics
I
GT
gate trigger current
I
L
latching current
I
H
holding current
V
T
on-state voltage
V
GT
gate trigger voltage
Characteristics
Conditions
Min
Typ
Max
Unit
V
D
= 12 V; I
T
= 0.1 A;
Figure 8
V
D
= 12 V; I
GT
= 0.1 A;
Figure 10
V
D
= 12 V; I
GT
= 0.1 A;
Figure 11
I
T
= 23 A;
Figure 9
V
D
= 12 V; I
T
= 0.1 A;
Figure 7
V
D
= V
DRM(max)
; I
T
= 0.1 A;
T
j
= 125
°
C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
;
T
j
= 125
°
C
-
-
-
-
-
0.25
2
10
7
1.4
0.6
0.4
15
40
20
1.75
1.5
-
mA
mA
mA
V
V
V
I
D
, I
R
off-state leakage
current
-
0.1
0.5
mA
Dynamic characteristics
dV
D
/dt
critical rate of rise of
off-state voltage
V
DM
= 67% V
DRM(max)
;T
j
= 125
°
C;
exponential waveform;
Figure 12
gate open circuit
R
GK
= 100
I
TM
= 40 A; V
D
= V
DRM(max)
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
V
D
= 67% V
DRM(max)
j
= 125
°
C;
I
TM
= 20 A; V
R
= 25 V;
dI
TM
/dt = 30 A/
μ
s;
dV
D
/dt = 50 V/
μ
s; R
GK
= 100
50
200
-
130
1000
2
-
-
-
V/
μ
s
V/
μ
s
μ
s
t
gt
gate controlled
turn-on time
circuit commuted
turn-on time
t
q
-
70
-
μ
s
Fig 7.
Normalized gate trigger voltage as a function of
junction temperature.
Fig 8.
Normalized gate trigger current as a function of
junction temperature.
T
j
(
°
C)
50
150
100
0
50
001aaa953
0.8
1.2
1.6
V
GT
(T
j
)
V
GT
(25
°
C)
0.4
T
j
(
°
C)
50
150
100
0
50
001aaa952
1
2
3
I
GT
(T
j
)
I
GT
(25
°
C)
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT152B | Thyristors |
| BT152BSERIES | Thyristors |
| BT152X | Thyristors |
| BT152XSERIES | Thyristors |
| BT162240DL | RP10 (E) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 15V; 2:1 Wide Input Voltage Range; 10 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 86% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT151X_SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors |
| BT151X-500 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151X-500C,127 | 功能描述:SCR RAIL-THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151X-500R | 功能描述:SCR RAIL SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151X-500R,127 | 功能描述:SCR RAIL SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。