參數(shù)資料
型號(hào)： BT152BSERIES
廠商： NXP Semiconductors N.V.
英文描述： Thyristors
中文描述： 晶閘管
文件頁數(shù)： 3/6頁
文件大小： 48K
代理商： BT152BSERIES
Philips Semiconductors
Product specification
Thyristors
BT152B series
Fig.1. Maximum on-state dissipation, P
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
Fig.4. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
mb
≤
103C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
0
5
10
15
20
25
a = 1.57
1.9
2.2
2.8
4
BT152
IT(AV) / A
Ptot / W
Tmb(max) / C
125
119.5
114
108.5
103
97.5
conduction
30
60
90
120
180
form
a
4
2.8
2.2
1.9
1.57
1
10
100
1000
0
50
100
150
200
250
BT152
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
10
10us
100
1000
BT152
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
0.01
0.1
1
10
0
10
20
30
40
50
BT152
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
5
10
15
20
25
BT152
Tmb / C
IT(RMS) / A
103 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
September 1997
3
Rev 1.100
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參數(shù)描述
BT152F-600 制造商:SEMIWELL 制造商全稱:SEMIWELL 功能描述:Silicon Controlled Rectifiers
BT152SERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors
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BT152X-400R 功能描述:SCR RAIL TRIAC RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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