參數(shù)資料
型號： BT236X-800G
廠商： NXP Semiconductors N.V.
元件分類： 參考電壓二極管
英文描述： 4Q Triac
中文描述： 4Q雙向可控硅
封裝： BT236X-800G<SOT186A (SOT186A)|<<http://www.nxp.com/packages/SOT186A.html<1<,;
文件頁數(shù)： 2/13頁
文件大?。?/td> 120K
代理商： BT236X-800G
BT236X_SER_F_G
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 3 November 2011
2 of 13
NXP Semiconductors
BT236X series F and G
6 A Four-quadrant triacs
3. Ordering information
4. Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/
s.
Table 2.
Type number
Ordering information
Package
Name
3-lead
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3 lead TO-220 ‘full pack’
Version
SOT186A
BT236X-600
BT236X-600F
BT236X-600G
BT236X-800
BT236X-800G
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DRM
repetitive peak off-state voltage
BT236X-600
BT236X-600F
BT236X-600G
BT236X-800
Limiting values
Conditions
Min
Max
Unit
[1]
-
600
600
600
800
V
V
V
V
[1]
-
[1]
-
-
BT236X-800G
RMS on-state current
-
-
800
6
V
A
I
T(RMS)
full sine wave; T
h
88
C;
see
Figure 4
and
5
full sine wave; T
j
= 25
C prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
s
T2+ G+
T2+ G
T2
G
T2
G+
I
TSM
non-repetitive peak on-state current
-
-
-
65
71
21
A
A
A
2
s
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state current
-
-
-
-
-
-
-
-
40
-
50
50
50
10
2
5
5
0.5
+150
125
A/
s
A/
s
A/
s
A/
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
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BT236X-800G,127 功能描述:雙向可控硅 RAIL-THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
BT236X-800G/L02Q 功能描述:BT236X-800G/L02/TO-220F/STANDA 制造商:ween semiconductors 系列:- 包裝:管件 零件狀態(tài):在售 三端雙向可控硅類型:標(biāo)準(zhǔn) 電壓 - 斷態(tài):800V 電流 - 通態(tài)（It（RMS））（最大值）:6A 電壓 - 柵極觸發(fā)（Vgt）（最大值）:1V 電流 - 不重復(fù)浪涌 50，60Hz（Itsm）:65A，71A 電流 - 柵極觸發(fā)（Igt）（最大值）:100mA 電流 - 保持（Ih）（最大值）:40mA 配置:單一 工作溫度:125°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 全封裝，隔離接片 供應(yīng)商器件封裝:TO-220F 標(biāo)準(zhǔn)包裝:600
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