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參數(shù)資料
| 型號： | BTA151SERIES |
| 英文描述： | Thyristors sensitive gate |
| 中文描述： | 晶閘管敏感門 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 43K |
| 代理商： | BTA151SERIES |
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
Fig.1. Maximum on-state dissipation, P
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
Fig.4. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
mb
≤
109C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
1
2
3
4
5
6
7
8
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
BT151
IT(AV) / A
Ptot / W
Tmb(max) / C
125
118.5
112
105.5
conduction
30
60
90
120
180
form
a
4
2.8
2.2
1.9
1.57
1
10
100
1000
0
20
40
60
80
100
120
BT151
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
10
10us
100
1000
BT151
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
0
0.1
1
10
5
10
15
20
25
BT151
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
5
10
15
BT151
Tmb / C
IT(RMS) / A
109 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
September 1997
3
Rev 1.200
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