參數(shù)資料
型號: BTA202X-800E
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: 2 A Three-quadrant high commutation triac
封裝: BTA202X-800E<SOT186A (SOT186A)|<<http://www.nxp.com/packages/SOT186A.html<1<Always Pb-free,;
文件頁數(shù): 3/12頁
文件大小: 81K
代理商: BTA202X-800E
BTA202X_SER_D_E_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 February 2008
3 of 12
NXP Semiconductors
BTA202X series D and E
2 A Three-quadrant triacs high commutation
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/
μ
s.
P
G(AV)
T
stg
T
j
average gate power
storage temperature
junction temperature
over any 20 ms period
-
40
-
0.5
+150
125
W
°
C
°
C
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
α
= conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aac112
0
1
2
3
0
0.4
0.8
1.2
1.6
2
I
T(RMS)
(A)
P
tot
(W)
α
= 180
°
120
°
90
°
60
°
30
°
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
003aac110
0
1
4
8
12
16
20
10
10
2
10
3
number of cycles
I
TSM
(A)
I
TSM
t
I
T
T
j(init)
= 25
°
C max
1/f
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