參數(shù)資料
型號(hào): BTA204W-600D,135
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
中文描述: 600 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 71K
代理商: BTA204W-600D,135
December 1998
3
Rev 1.000
Philips Semiconductors
Product specication
Three quadrant triacs
guaranteed commutation
BTA204W series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
full or half cycle
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted; minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:2
-
70
-
K/W
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
10
25
mA
T2+ G-
-
5
10
25
mA
T2- G-
-
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
6
12
20
mA
T2+ G-
-
9
18
30
mA
T2- G-
-
6
12
20
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
6
12
20
mA
V
T
On-state voltage
I
T = 2 A
-
1.2
1.5
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 C
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...D
...E
...F
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);20
30
50
-
V/
s
off-state voltage
T
j = 125 C; exponential
waveform; gate open
circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
1.0
2.0
2.5
-
A/ms
commutating current
I
T(RMS) = 1 A;
dV
com/dt = 20V/s; gate
open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
5.0
-
A/ms
commutating current
I
T(RMS) = 1 A;
dV
com/dt = 0.1V/s; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 12 A; VD = VDRM(max);-
-
2
-
s
time
I
G = 0.1 A; dIG/dt = 5 A/s
2 Device does not trigger in the T2-, G+ quadrant.
相關(guān)PDF資料
PDF描述
BTA204W-600E,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-600F,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 25 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 600 V; Package: week 35, 2003
BTA204W-800E,135 Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 800 V; Package: week 35, 2003
BTA204X-600B,127 Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 32, 2004
BTA204X-600C,127 Three quadrant triacs high commutation - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 32, 2004
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BTA204W-600E,135 功能描述:雙向可控硅 TAPE13 3Q TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
BTA204W-600F 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation
BTA204W-600F /T3 功能描述:雙向可控硅 TAPE13 TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB