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參數(shù)資料
| 型號(hào)： | BTA208-800E,127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 8 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005 |
| 中文描述： | 800 V, 8 A, TRIAC, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 214K |
| 代理商： | BTA208-800E,127 |
BTA208-800E
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 12 April 2011
2 of 13
NXP Semiconductors
BTA208-800E
3Q Hi-Com Triac
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
T1
main terminal 1
SOT78 (TO-220AB)
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
12
mb
3
sym051
T1
G
T2
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BTA208-800E
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
-
800
V
IT(RMS)
RMS on-state current
-8
A
ITSM
non-repetitive peak on-state
current
full sine wave; Tj(init) =25°C; tp = 20 ms;
-65
A
full sine wave; Tj(init) =25°C; tp = 16.7 ms
-
72
A
I2tI2t for fusing
tp = 10 ms; sine-wave pulse
-
21
A2s
dIT/dt
rate of rise of on-state current
IT =12A; IG = 0.2 A; dIG/dt = 0.2 A/s
-
100
A/s
IGM
peak gate current
-
2
A
VGM
peak gate voltage
-
5
V
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA208-800F | 制造商:NXP Semiconductors 功能描述:TRIAC HICOM 8A 800V TO220AB 制造商:NXP Semiconductors 功能描述:TRIAC, HICOM, 8A, 800V, TO220AB 制造商:NXP Semiconductors 功能描述:TRIAC, HICOM, 8A, 800V, TO220AB; Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max (QI), Igt:25mA; On State RMS Current IT(rms):8A; Peak Non Rep Surge Current Itsm 50Hz:71A; Gate Trigger Voltage Max Vgt:1.5V; ;RoHS Compliant: Yes |
| BTA208-800F,127 | 功能描述:雙向可控硅 3Q HI-COM TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA208B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA208B-1000C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Three-quadrant triacs high commutation |
| BTA208B-1000C /T3 | 功能描述:雙向可控硅 3 QUADRANT TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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